收藏本站
NP80N06MLG, NP80N06NLG, NP80N06PLG
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
SYMBOL
I DSS
I GSS
V GS(th)
TEST CONDITIONS
V DS = 60 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
MIN.
1.4
TYP.
MAX.
1
± 10
2.5
UNIT
μ A
μ A
V
Forward Transfer Admittance
Note
| y fs |
V DS = 5 V, I D = 35 A
25
59
S
Drain to Source On-state Resistance
Note
R DS(on)1
V GS = 10 V, I D = 40 A
6.7
8.6
m Ω
NP80N06MLG, NP80N06NLG
V GS = 10 V, I D = 40 A
6.2
8.3
m Ω
NP80N06PLG
R DS(on)2
V GS = 4.5 V, I D = 35 A
8.4
13.3
m Ω
NP80N06MLG, NP80N06NLG
V GS = 4.5 V, I D = 35 A
7.6
13
m Ω
NP80N06PLG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 30 V, I D = 40 A,
V GS = 10 V,
R G = 0 Ω
V DD = 48 V,
V GS = 10 V,
I D = 80 A
4600
370
220
17
13
70
7
85
14
25
6900
560
400
37
33
140
18
128
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 80 A, V GS = 0 V
I F = 80 A, V GS = 0 V,
di/dt = 100 A/ μ s
0.96
41
56
1.5
V
ns
nC
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
PG.
D.U.T.
R G = 25 Ω
50 Ω
L
V DD
PG.
D.U.T.
R G
R L
V DD
V GS
Wave Form
V GS
0
10%
V GS
90%
V GS = 20 → 0 V
V DS
90%
90%
V DD
I D
I AS
BV DSS
V DS
V GS
0
τ
V DS
Wave Form
V DS
0
t d(on)
10%
t r
10%
t d(off)
t f
Starting T ch
τ = 1 μ s
Duty Cycle ≤ 1%
t on
t off
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet D19798EJ1V0DS
3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP82N06PDG-E1-AY MOSFET N-CH 60V 82A TO-263
NP83P04PDG-E1-AY MOSFET P-CH -40V 83A TO-263
NP83P06PDG-E1-AY MOSFET P-CH -60V 83A TO-263
NP84N075MUE-S18-AY MOSFET N-CH 75V 84A TO-220
NP88N03KDG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N03KUG-E1-AY MOSFET N-CH 30V 88A TO-263
NP88N04KUG-E1-AZ MOSFET N-CH 40V 88A TO-263
NP88N04NUG-S18-AY MOSFET N-CH 40V 88A TO-262
相关代理商/技术参数
NP82N06PDG-E1-AY 功能描述:MOSFET N-CH 60V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP82N06PDG-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E1-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N06PLG-E2-AY 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
NP82N10PUF 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E1-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP82N10PUF-E2-AY 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR